新型双区阴极结构体效应二极管  

New Structure of Two-Area Cathodes Gunn Diodes

作　　者：张晓[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《半导体技术》2007年第3期220-222,共3页Semiconductor Technology

摘　　要：常规的GaAs体效应二极管的阴极结构多采用欧姆阴极,在毫米波频段(W波段),器件的转换效率小于1%。介绍了一种新型的双区阴极结构在W波段体效应二极管中的实现,并研制出了样品器件。采用此种结构,可以显著提高毫米波器件的输出功率和转换效率。The cathode structure of general Gunn diodes is ohmic contact. The conversion efficiency of diodes is less than 1% in millimeter-wave band （W-band）. A new structure of two area cathodes applied in W-band Gunn diodes was introduced and made. By adopting this structure, the conversion of the efficiency and the output power of the diodes are enhanced observably.

关 键 词：体效应二极管 欧姆阴极 双区阴极 毫米波 

分 类 号：TN315.3[电子电信—物理电子学]