CaMoO_4薄膜的恒电位阳极氧化法制备及表征  

Preparation of CaMoO_4 Thin Film by Potentiostatic Anode Oxidation Method and Characterization

作　　者：毕剑[1] 张姝[1] 赖欣[1] 崔春华[1] 史芳[1] 高道江[1] 

机构地区：[1]四川师范大学化学与材料科学学院,成都610066

出　　处：《应用化学》2007年第5期494-498,共5页Chinese Journal of Applied Chemistry

基　　金：国家自然科学基金面上资助项目(50472103);四川省教育厅重点资助项目(2004A90)

摘　　要：在饱和Ca(OH)2溶液中,采用恒电位阳极氧化法制备了白钨矿结构的CaMoO4薄膜;研究了溶液酸度和基体的前处理方式对薄膜制备的影响以及沉积过程中电流的变化;通过XRD、SEM、XPS、FA等测试技术分析了薄膜的晶相结构、表面形貌、化学组成、室温光致发光等特性。结果表明,在抛光基体上沉积的CaMoO4薄膜的晶粒生长更完全,粒径更大,均匀性更好,有更好的室温光致发光特性;在pH>12.30的溶液中沉积时,易造成晶粒的团簇生长,溶液的pH值控制在12.00附近比较好。In saturated Ca （OH）2 solutions, CaMoO4 thin films with scheelite structure were prepared by potentiostatic anode oxidation method. The influence of solution acidity and the method of substrate pretreatment on the film growth as well as the change of current during the deposition were studied, and the crystal phase structure, surface morphology, chemical compositions as well as photoluminescence at room temperature were investigated by XRD, SEM, XPS and FA （fluorescence analysis）, respectively. The results revealed that the grain growth was more complete for the CaMoO4 films deposited on polished substrate, and the grain size was larger and the photoluminescence at room temperature better than that of CaMoO4 films deposited on the substrate etched by mixture acids. When the solution pH exceeded 12.30, cluster of the grains was observed. Therefore, it is better to prepare CaMoO4 films by potentiostatic anode oxidation method on polished substrate, and to control the solution pH at about 12. 00.

关 键 词：CaMoO4薄膜 恒电位 阳极氧化 制备 表征 

分 类 号：O614.2[理学—无机化学] TB34[理学—化学]