快速功率二极管正反向恢复特性仿真研究  

A Simulation Research on the Forward and Reverse Recovery Characteristics of the Fast Power Diode

作　　者：王振民[1] 张芩[1] 薛家祥[1] 黄石生[1] 

机构地区：[1]华南理工大学,广东广州510640

出　　处：《电力电子技术》2007年第5期92-94,共3页Power Electronics

基　　金：广东省自然科学基金资助项目(04020100);国家自然科学基金资助项目(50375054)~~

摘　　要：在国内外电力电子领域对功率二极管模型研究成果的基础上,利用计算机仿真技术,从数学物理模型和电路模型两方面,对快速功率二极管的反向恢复特性进行了较深入的研究,获得了可正确描述正反向恢复过程的功率二极管仿真模型。该模型克服了标准二极管模型完全忽视正向恢复效应,对二极管反向恢复现象的模拟也会产生错误振荡的缺陷,因此具有较好的现实意义。On the basis of research achievements on the model of the fast high-power diode in the field of power electronics ,from the basis of math-physics and electro circuit, the forward and reverse recovery characteristics of the power fast diode are studied in detail and systematically with the PSPICE simulation tool.The simulation model of the fast power diode which can describe correctly the forward and reverse recovery process is obtained.This model overcomes the defects of the standard model which completely ignores the forward recovery effects and exists wrong synthesis when modeling the reverse recovery process.This model can cause significant effect on the application of the fast power diode.

关 键 词：半导体二极管 模型 仿真/反向恢复特性 

分 类 号：TN31[电子电信—物理电子学] TP391.9[自动化与计算机技术—计算机应用技术]