并五苯薄膜的AFM及XRD研究  

Analysis of pentacene thin films using atomic force microscopy (AFM) and X-ray diffraction(XRD)

作　　者：陶春兰[1] 张旭辉[1] 董茂军[1] 欧谷平[1] 张福甲[1] 刘一阳[2] 张浩力[2] 

机构地区：[1]兰州大学物理科学与技术学院微电子研究所,甘肃兰州730000 [2]兰州大学化学化工学院功能有机分子化学国家重点实验室,甘肃兰州730000

出　　处：《功能材料》2007年第5期740-742,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(60676033)

摘　　要：报道了以热氧化硅片为衬底,用溶液溶解和真空蒸镀两种方法制备有机半导体材料并五苯薄膜。用原子力显微镜(AFM)分析了薄膜的形貌,用X射线衍射仪(XRD)分析了薄膜的晶体结构,讨论了诸多因素对薄膜的影响以及两种方法制备的并五苯薄膜的相结构。The thin films of organic semiconductor pentacene were fabricated by tow ways on SiO2 layer by dry oxidation, which were solution process and thermal evaporation. Using the atomic force microscopic images analyzed the surface morphologies and X-ray diffraction （XRD） patterns analyzed the crystal structure of the sampies. The influences of fabricate the pentacene thin-films were explored, and discussed the pentacene thin-film＇ phase structure which fabricated with tow different ways.

关 键 词：并五苯薄膜 有机场效应晶体管(OFETs) AFM XRD 

分 类 号：TN304.52[电子电信—物理电子学]