Transcriptional profile in response to ionizing radiation at low dose in Deinococcus radiodurans  被引量:2

Transcriptional profile in response to ionizing radiation at low dose in Deinococcus radiodurans

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作  者:Chen Huan Xu Zhenjian Tian Bing Chen Weiwei Hu Songnian Hua Yuejin 

机构地区:[1]Institute of Nuclear-Agricultural Science, Zhejiang University, Hangzhou 310029, China [2]James D. Watson Institute of Genome Sciences, Zhejiang University, Hangzhou 310008, China [3]Beijing Institute of Genomics, Chinese Academy of Sciences, Beijing 101300, China

出  处:《Progress in Natural Science:Materials International》2007年第5期529-536,共8页自然科学进展·国际材料(英文版)

基  金:Supported by the National Program on Key Basic Research Projects (Grant No. 2004CB19604);National Natural Science Foundation of China (Grant Nos. 30425038 and 30330020)

摘  要:The genome-wide transcription profile of Deinococcus radiodurans cells was investigated after treatment with low dose irradiation (2 kGy). From the expression profile, we found that the process of DNA repair was induced in order, i.e. genes involved in base excision repair, nucleotide excision repair and single-strand annealing were induced immediately after ionizing radiation, and genes for recombination repair, including recA, recD and recQ were then activated. Especially, recD and recQ were specifically induced at low dose irradiation, and this phenomenon informed us that these two genes would play a certain role in anti-oxidation. Some genes such as ddrA and ssb were activated during the whole repair phase. Furthermore, the response of oxidative stress-related genes under low dose irradiation showed a different pattern from that of the acute high-leval irradiation, many anti-oxidative genes were induced to scavenge reactive oxygen species directly, other associated systems also changed their expression patterns during the recovery time, such as iron metabolism systems, intracellular mutagenic precursors sanitize systems. These characteristics indicate that there is a powerful and orderly recovery process in Deinococcus radiodurans.Deinococcus radiodurans 房间的染色体宽的抄写侧面与低剂量照耀在处理以后被调查, 2 kGy ) 。从表示侧面,我们发现 DNA 修理的过程被导致有序,即涉及基础切除修理,核苷酸切除修理并且单个海滨的退火的基因在电离以后立即被导致包括消遣 A,为再结合修理的放射,和基因收到, recQ 然后被激活。特别收到, recQ 明确地在低剂量照耀被导致,并且这现象通知我们这二基因将在反氧化起某个作用。象 ddrA 和 ssb 那样的一些基因在整个修理阶段期间被激活。而且,在低剂量照耀下面的氧化压力相关的基因的反应显示出一个不同模式从尖锐高级照耀,许多抗氧化的基因被导致清除反应的氧种类直接,另外的联系系统也在恢复时间期间改变了他们的表达式模式例如铁新陈代谢系统,细胞内部的诱变的先锋清洁系统。这些特征显示在 Deinococcus radiodurans 有一个强大、有序的恢复过程。

关 键 词:Deinococcus radiodurans microarry oxidative stress ionizing radiation. 

分 类 号:Q937[生物学—微生物学]

 

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