用XPS对激活过程中的GaAs光电阴极的表面分析  

Surface Analysis of the GaAs Photocathode by XPS During Activation

作　　者：黄振武[1] 冯敦平 

机构地区：[1]福州大学物理系

出　　处：《福州大学学报（自然科学版）》1990年第2期18-23,共6页Journal of Fuzhou University(Natural Science Edition)

基　　金：国家自然科学基金的资助

摘　　要：对ＧａＡｓ光电阴极激活过程中各阶段做了Ｘ射线光电子谱（ＸＰＳ）表面分析，根据ＸＰＳ分析所得数据，改进了激活工艺，提出了获得更好发射性能的光电阴极的最佳Ｃｓ和Ｏ２量，并提出了Ｃｓ和Ｏ２在ＧａＡｓ表面排列的模型．The GaAs photocathode surface has been studied by XPS in every stage of activation. Basing on the XPS data, we have improved the activation technology, suggested the optimum amount of Cs and O2 for photocathodes of better emmission properties, and proposed a model of Cs and O2 arrangement on the GaAs surface.

关 键 词：砷化镓 光电阴极 XPS 表面分析 

分 类 号：O462.3[理学—电子物理学]