PIN二极管用硅外延材料  

Silicon Epitaxy Material for PIN Diode

作　　者：殷海丰[1] 徐永宽[1] 薛兵[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2007年第5期410-412,共3页Semiconductor Technology

摘　　要：介绍了研制适用于大功率PIN二极管的硅外延材料的工艺过程,采用CVD化学气相外延生长技术,对硅源流量与掺杂剂浓度的精确控制,实现了快速外延生长和高浓度掺杂。通过大量实验,利用4.0μm/min的生长速率得到了掺杂浓度为2.0×1019cm-3的超高浓度的掺杂外延层,其外延层表面光亮,满足了PIN二极管的使用要求。During CVD epitaxy technology by the accurate controlling of the silicon source flow and the concentration of dopant, the silicon epitaxy material suitable for high power PIN diode was got. The quick epitaxy growth and large concentration of dopant were resolved. Using 4.0 μm/min of growth rate, the silicon epitaxial wafers with n-type carrier concentration ≥ 2.24 × 10^19 cm^- 3 and transition layer thickness ≤ 10 μm were obtained. The performance of the PIN diodes made from the inverse epitaxial wafer is superior. Key words： epitaxy; PIN diode ; resistivity dopant

关 键 词：外延 PIN二极管 电阻率 掺杂剂 

分 类 号：TH312.4[机械工程—机械制造及自动化] TN304.054[电子电信—物理电子学]