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作 者:吴怡[1] 徐铁峰[1] 聂秋华[1] 戴世勋[1] 沈祥[1] 王训四[1]
机构地区:[1]宁波大学信息科学与工程学院,宁波315211
出 处:《武汉理工大学学报》2007年第E01期254-259,共6页Journal of Wuhan University of Technology
基 金:国家973前期预研项目(2006CB708607),浙江省科技计划项目(2006C11127)和宁波市自然科学基金项目(2006A610056).
摘 要:采用熔融冷却法制备了Er^3+掺杂的Ge25Ga5S70硫系玻璃,研究其红外透过率、热稳定性。应用Judd—Ofelt理论计算了Er^3+离子的强度参数Ωt(t=2,4,6)、自发辐射跃迁几率、荧光分支比和辐射寿命等光谱参数。应用McCumber理论,计算了Er^3+:^4I13/2→^4I15/2跃迁的受激发射截面。结果表明,该玻璃具有较宽的荧光半高宽(FWHM=71nm)、较大的受激发射截面(Fe=1.325×10^-20cm^2)和较好的稳定性,是一种理想的宽带光纤放大器基质材料。A Er^3+-doped Ge25Ga5S70 glass was fabricated by the melt quench method, studying the glass by the infrared transmission and the thermal stability. The Judd-Ofelt intensity parameters Ωt (t = 2,4,6), spontaneous transition probability, fluorescence branching ratio and radiative lifetime of energy levels for Er^3+ were calculated by Judd-Ofelt theory. The stimulated emission cross-section of Er^3+ :^4I13/2→^4I15/2 transition was calculated by McCumber theory. The results show that this chalcogenide glass has broad fluorescence full width at half maximum (FWHM = 71 nm), large stimulated emission cross-section ( σe^peak = 13.25 × 10^-21 cm^2) and good thermal stability. This glass can be used as a candidate host material for potential broadband optical amplifiers.
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