光致变色二芳烯掩膜及在近场光存储中的应用  

The Application of Photochromic Diarylethene Mask Layer in the Near-Field Optical Storage

作　　者：石明[1] 牛丽红[1] 佟庆笑[1] 唐应武[1] 通讯联系人：张复实，E-mail：[e-mail]．张复实 张复实[1] 

机构地区：[1]清华大学化学系有机光电子与分子工程教育部重点实验室,北京100084

出　　处：《感光科学与光化学》2007年第3期204-208,共5页Photographic Science and Photochemistry

基　　金：国家自然科学基金(20333080;20572059;20502013);北京印刷学院印刷包装材料与技术北京市重点实验室基金(KF050302)

摘　　要：合成了在超分辨率近场结构(Super-RENS)存储方式中适合做掩膜层和记录层材料的两种全氟二芳烯,旋涂法制备了实验存储盘片,并进行了近场存储实验.初步的实验表明,光致变色二芳烯掩膜层可以缩小聚焦激光的直径,得到小尺寸记录信息.掩膜层中二芳烯的浓度,对近场存储结果影响很大,存在一个最佳浓度使记录光斑的尺寸减少到最小.Two kinds of diarylperfluorocyclopentenes which are suitable for the use of mask layer and recording layer materials in Super-rens were synthesized and the sample disc was developed as well. The initial near-field storage experiment demonstrated that the size of recording laser focus could be decreased by the photochromic diarylethenes mask layer. Thus the decreased recording information was obtained. It also showed the concentration of diarylethene in the mask layer strongly influenced the size of recording marks. An optimum concentration existed, in which the smallest size of recording information was obtained.

关 键 词：物理化学 光致变色 超分辨掩膜 超分辨率近场结构 

分 类 号：TQ591[化学工程—精细化工]