Ti_2SnC的合成及其反应机制的研究  被引量:8

Fabrication and Reaction Mechanism of High Purity of Ti_2SnC

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作  者:贝国平[1] 李世波[1] 翟洪祥[1] 周洋[1] 

机构地区:[1]北京交通大学机械与电子控制工程学院材料研究所,北京100044

出  处:《航空材料学报》2007年第3期47-50,共4页Journal of Aeronautical Materials

基  金:国家自然基金(50472045);北京交通大学校重大基金

摘  要:采用常压烧结技术,分别对Ti/Sn/C和Ti/Sn/TiC两种配料,在950-1250℃温度范围、保温15-360 min,真空条件下进行烧结。结果表明,两种配料均在1200℃短时间内合成了高纯度Ti2SnC粉。利用X射线衍射(XRD),能量色散谱仪(EDS)及扫描电镜(SEM)对Ti2SnC粉末进行了表征,并对Ti2SnC的形成机制进行了分析。所制备的Ti2SnC为片状颗粒,表面光滑,颗粒尺寸小于10μm,厚度约为1-2μm。Ti2SnC的形成机制是,在Ti-Sn-C反应系统中,Ti和Sn先反应形成Ti-Sn化合物;然后是Ti和C反应形成TiC;最后,Ti-Sn化合物和TiC反应形成Ti2SnC。此反应机制进一步由Ti-Sn-TiC反应系统验证。Ti2SnC is a promising candidate material for diverse applications because it combines many good properties of metals and ceramics. However, it is difficult to make a high purity of Ti2SnC powder. Thus, synthesis of high purity of Ti2SnC powder becomes a worldwide task. The influences of starting composition, ratios and parameters on the high purity of titanium tin carbide (Ti2SnC) have been investigated systematically. Ti/Sn/C and Ti/Sn/TiC were sintered at 950 -1250℃ for 15 - 360 min at vacuum atmosphere. The results demonstrated that high purity of Ti2SnC has been obtained by pressureless sintering the above mixture powders. XRD, EDS and SEM were used to characterize Ti2SnC powder. Ti2SnC grains with smooth surfaces are plate like, and less than 10 μm in size and 1 -2 μm in thickness. The reaction mechanism was also analyzed on the basis of the XRD and EDS analyses as well as SEM observation. In the Ti-Sn-C reaction system, Ti-Sn compounds were first formed between Ti and Sn, then TiC began to form between Ti and C, at last Ti-Sn compounds reacted with TiC to form Ti2SnC. The above mechanism was further tested by the Ti-Sn-TiC reaction system.

关 键 词:Ti2SnC 常压合成 表征 反应机制 

分 类 号:TQ127.1[化学工程—无机化工]

 

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