用蒙特卡罗方法计算X射线在酞菁铜与重金属界面的剂量增强系数  

Monte-Carlo Calculation of X-Ray Dose-enhancement-factor Nearby Copper-phthalocyanine Connected High Z Metal Interface

作　　者：赵宝奎[1] 赵广义[1] 周银行[1] 马玉刚[1] 董文斌[1] 

机构地区：[1]吉林大学物理学院,长春130021

出　　处：《吉林大学学报（理学版）》2007年第3期448-450,共3页Journal of Jilin University:Science Edition

摘　　要：用蒙特卡罗方法计算金-酞菁铜、钨-酞菁铜和钽-酞菁铜界面的剂量增强系数,结果表明，当X射线能量为100～150keV时，界面附近酞菁铜一侧存在较大的剂量增强.The dose would be enhanced on the low-Z material side when X-ray enters the interface constructed with two different materials. The dose-enhancement-factors of Au-CuPci, W-CuPc and Ta-CuPc interfaces were calculated via the Monte-Carlo method. The calculated results demonstrate that there exists stronger dose-enhancement on the CuPc side near the interface when the energy of X-ray is between 100 keV and 150 keV.

关 键 词：有机半导体 X射线 剂量增强系数 界面 

分 类 号：O434.1[机械工程—光学工程]