光胶做挡光层的紫外光刻掩膜用于高聚物芯片表面选择性光化学改性  

A Simple Photomask with Photoresist Mask Layer for Ultraviolet-Photolithography and Its Application for Selectively Photochemical Surface Modification of Polymers

作　　者：孔泳[1] 陈恒武[1] 云晓[1] 郝振霞[1] 方肇伦[1] 

机构地区：[1]浙江大学化学系微分析系统研究所,杭州310028

出　　处：《分析化学》2007年第5期623-627,共5页Chinese Journal of Analytical Chemistry

基　　金：国家自然科学基金(20475048);浙江省自然科学基金(M203098)资助项目

摘　　要：紫外光谱研究表明,AZ正性光胶当厚度大于10μm时,在200～285nm的紫外光区几乎不透光。本研究据此研制了一种以固化后的AZ光胶做挡光层、石英玻璃做底板的紫外光刻掩膜。应用AZ光胶掩膜对聚碳酸酯(PC)表面进行以低压汞灯(主要辐射254nm紫外光)为光源的选择性光化学改性,在光照区域形成化学镀所需的催化中心后,采用化学镀技术,在PC毛细管电泳芯片上制备安培检测用的集成化金微电极。本掩膜材料简单,制作方便,无须洁净实验室和贵重的设备,成本低廉。UV spectroscopic study reveals that a positive AZ photoresist films thicker than 10 μm can hardly transmit the UV lights of the wavelengths raging from 200 to 285 nm. Based on that above mentioned, a simple photomask for UV photolithography was developed that composes of a fused silica substrate coated with a layer of positive AZ photoresist that was employed to mask the UV light from the source. By using a low-pressure mercury lamp that mainly emits 254 nm line as the radiation source, the developed photomask has been applied for selectively photochemical modification of polycarbonate （PC） sheets. After a layer of catalyst of nano gold particles was formed on the irradiated area, micro gold electrodes for amperometric detection were fabricated by electroless plating on micro electrophoresis chips made of PC sheets. Without need of a cleanroom, the photomasks can be fabricated by analysts engaged in microfluidic chips or bio-chips in their chemical laboratories with low-cost materials and simple procedures.

关 键 词：光刻掩膜 AZ光胶 聚碳酸酯 光化学改性 金微电极 

分 类 号：TN405[电子电信—微电子学与固体电子学]