高失配半导体薄膜材料的纳米异质外延新技术  

Nanoheteroepitaxial New Technology for High Mismatched Semiconductor Thin Film Materials

作　　者：陈长春[1] 刘江锋[1] 余本海[1] 戴启润[1] 

机构地区：[1]河南省信阳师范学院物理与电子工程学院,河南信阳464000

出　　处：《微纳电子技术》2007年第5期219-224,共6页Micronanoelectronic Technology

摘　　要：纳米异质外延技术是制备高失配半导体薄膜的一种纳米制作技术路线,随着超大规模集成电路纳米图样加工技术的进步,它将在制备无缺陷密度且单晶品质完美的高失配半导体薄膜材料中发挥巨大的作用。详细地综述了纳米异质外延技术的原理,介绍了纳米图样制作技术并展示了运用纳米异质外延技术在Si(111)衬底上实现高失配GaN(失配度为20%)薄膜材料及在Si(100)衬底上实现InP薄膜材料的高品质单晶外延生长。Nanoheteroepitaxial techonology is a nanofabrication route to improved high mismatched semiconductor thin film materials. With the further advance in the fabrication tehcnology of nanopattern, much attention will be paid to nanoheteroepitaxy for the growth of high quality heteroepitaxial film on Si substrate. Both the fundamental principle of nanoheteroepitaxial techno-logy and various methods for fabricating nano-pattern on substrate are overviewed. In addition, the high quality mismatched （20%） GaN film with dislocation-free grown on Si （111） substrate and InP film on Si （100） substrates fabricated by nanoheteroeoitaxy also demonstrated its availability.

关 键 词：纳米异质外延 应变 晶格失配薄膜材料 

分 类 号：TN304[电子电信—物理电子学]