射频溅射法生长ZnO薄膜的参数研究  

Study on the Parameter of ZnO Thin Films Deposited by RF Magnetron Sputtering

作　　者：耿茜[1] 汪建华[1] 王升高[1] 

机构地区：[1]武汉工程大学等离子体化学与新材料重点实验室,武汉430073

出　　处：《微纳电子技术》2007年第5期250-253,共4页Micronanoelectronic Technology

基　　金：湖北省科技攻关计划(2002AA105A02)

摘　　要：以ZnO陶瓷为溅射靶材,通入纯氩气,使用射频溅射法在玻璃基片上制备ZnO薄膜,研究了气体压强、基片温度、溅射功率等对薄膜性质的影响。通过XRD及原子力显微镜(AFM)等检测得出制备C轴(002)ZAO薄膜的最佳工艺条件为:溅射压强0.4Pa;溅射功率200W;基片温度300℃。The RF magnetron sputtering technique was employed for ZnO thin films deposition on glass by ZnO target. The reaction atmosphere was Ar. The work pressure, RF power, and the temperature of substrate were studied. The ZnO film was analyzed with XRD and AFM. The best conditions of obtaining ZnO thin film are： the work pressure is 0.4 Pa, the RF power is 200 W and the temperature of substrate is 300℃.

关 键 词：ZnO陶瓷靶材 薄膜 射频 X射线衍射分析 原子力显微镜 

分 类 号：TB381[一般工业技术—材料科学与工程] TB321