两步法制备性能优良的ZnO纳米线  

Excellent Characteristics of ZnO Nanowires Synthesized by Two Step Method

作　　者：张秋香[1] 张永胜[1] 白伟[1] 郁可[1] 朱自强[1] 

机构地区：[1]华东师范大学电子科学技术系,上海200062

出　　处：《华东师范大学学报（自然科学版）》2007年第3期135-140,共6页Journal of East China Normal University(Natural Science)

基　　金：国家自然科学基金(60476004);河南省自然科学基金(0611023800)

摘　　要：利用热蒸发和溶液浸泡两步法制备了性能优良的ZnO纳米线,研究了这些ZnO纳米线的光致发光和场发射特性,与直接采用热蒸发方法生长的ZnO纳米线相比,由该方法得到的ZnO纳米线表现出了更好的紫外发光特性,同时发生5nm的蓝移,场发射测试表明其开启电场和阈值电场分别达到2.3 V／μm和6.8 V／μm。该方法适用于制备光致发光和场发射性能优良的ZnO纳米线。ZnO nanowires with excellent properties were synthesized by two-step method. Photoluminescence （PL） measurements showed that the ZnO nanowires have stronger ultraviolet emission properties at 376 nm and there is a 5 nm blue-shift after being immersed in thiourea （TU） solution compared with those of without immersion. The immersed ZnO nanowires show a turn-on field of 2.3 V/μm at a current density of 0.1 μA/cm^2 and emission current density up to 1 mA/cm^2 at an applied field of 6.8 V/μm, which are 2.7 V/μm and 7. 9 V/μm for those of without being immersed, respectively. So this method may be an effective method to improve the characteristics of ZnO nanowires.

关 键 词：ZNO纳米线 光致发光 场发射 

分 类 号：TN401[电子电信—微电子学与固体电子学]