基于垂直层叠结构的多光谱彩色传感器研究  

Multispectral Color Sensor Based on Vertically Stacked Structure

作　　者：陈远[1] 徐之海[1] 冯华君[1] 

机构地区：[1]浙江大学现代光学仪器国家重点实验室,浙江杭州310027

出　　处：《光谱学与光谱分析》2007年第5期837-841,共5页Spectroscopy and Spectral Analysis

基　　金：国家自然科学基金项目(60577047)资助

摘　　要：基于垂直层叠的半导体结构是多光谱彩色传感器中的新技术,它具有抗色彩失真,高空间分辨率,无需彩色插值和低通滤波器以及更高的光能量利用率等优点。它的基本原理是利用不同波长的光在硅材料中穿透深度的非线性分布,即短波长的蓝光主要在表面被吸收,长波长的红光则主要在更深的位置被吸收。目前国际上研究的结构中有使用标准晶态硅工艺制作的埋入式多pn结结构和使用PECVD方法制作的非晶硅系象素结构,其中前者利用了标准的硅工艺,而由于后者使用了光学性能更好的非晶硅系材料,在结构设计上具有更大的灵活性。文章在综合了国际研究文献的基础上,对其光谱机理和象素结构进行了理论与实验分析,对性能做出了比较,并提出了下一步研究的主要方向。A novel multispectral color sensor based on vertically stacked structure is introduced. The advantages of this sensor include anti color aliasing, high spatial resolution, elimination of color interpolation and low-pass filter. Its basic principle lies on the silicon material＇s different of penetration depth of electromagnetic wave with different wavelength, i. e. blue light with short wavelength is mainly absorbed on the surface, while red light with longer wavelength is mainly absorbed at deeper location. The current research and development are related to two pixel structures： the buried pn junctions structure made by standard silicon process, and stacked amorphous silicon and its alloys thin films made by PECVD. The former one adopts standard silicon technology while the latter one adopts amorphous silicon, which has better optical performance, thus greater flexibility in design. The authors focused on the theoretical and experimental analyses of the spectrum mechanisms and output performances with different pixel structures, and discussed_the way for further research.

关 键 词：多光谱 彩色传感器 垂直层叠结构 

分 类 号：O443.1[理学—电磁学]