碳化钨对常压烧结氮化硅陶瓷致密化的影响  

THE INFLUENCE OF TUNGSTEN CARBIDE ON THE DENSIFICATION OF TRADITIONAL PRESS SINTEROD SILICON NITRIDE CERAMIC

作　　者：杨海涛[1] 徐润泽[2] 黄培云[2] 袁润章 

机构地区：[1]武汉工业大学,武汉430070 [2]中南工业大学,长沙410087

出　　处：《硬质合金》1997年第1期28-31,共4页Cemented Carbides

摘　　要：研究碳化钨对常压烧结Si3N4-MgO－CeO2陶瓷致密化和性能的影响，通过球磨引入适量的碳化钨对烧结氮化硅陶瓷的致密化和性能是有利的，通过控制球磨时间和球料比可控制磨入的碳化钨的含量，当碳化钨含量为3．9wt％时，效果最好，烧结氮化硅陶瓷的相对密度为98．5％，室温抗弯强度为948MPa。The inflcence of tungsten carbide on densification and property of traditiond press sintered Si3Nt- Mgo-CeO2 ceramic is studced it is repersented that adding an amount of tungsten carbide is favourable to densification and property of sintreed silicon nitride cermic by ball milling. The Content of milled tungston cartide can be. by controlld the milling time and ratio of materials. Best result can be fained when the content of tingsten carbide is 3. 9m% Speafic density of sintered silicen nitide ceramic is 98. 5 %,Transverse rupture strength of room tenperation is 948MPa

关 键 词：烧结 氧化硅陶瓷 致密化 碳化钨 

分 类 号：TF125.41[冶金工程—粉末冶金]