射频溅射法在CeO_2/YSZ/Y_2O_3/NiW衬底上制备YBCO超导层  

YBCO Superconducting Layer on CeO_2/YSZ/Y_2O_3/NiW Substrates by RF Magnetron Sputtering

作　　者：张华[1] 杨坚[1] 刘慧舟[1] 屈飞[1] 

机构地区：[1]北京有色金属研究总院超导材料研究中心,北京100088

出　　处：《稀有金属》2007年第2期245-247,共3页Chinese Journal of Rare Metals

基　　金：国家重点基础研究发展计划("973计划")(2006CB601005);北京有色金属研究总院青年基金资助项目

摘　　要：用射频溅射的方法在强立方织构的CeO2/YSZ/Y2O3/NiW衬底上制备了YBCO超导层. 温度、气压等因素对超导层的外延生长有重要影响. 在基片温度大于780 ℃, 气压在11～160 Pa之间, 都有NiWO4化合物生成;在退火吸氧过程中, 金属基底被氧化. 最终在温度780 ℃, 气压100 Pa的条件下, 制备出了纯（00l）取向的YBCO薄膜, 其平面内φ扫描半高宽小于10°, 超导转变温度为87.2 K, 传导电流为11 A.The YBCO superconducting layers were deposited by RF magnetron sputtering on biaxially textured Ni-W substrates, using CeO2/YSZ/Y2O3 buffer layer architecture. The factors, such as substrate temperature, pressure had great influence on the epitaxial growth of YBCO. The NiWO4 peaks were observable during YBCO deposition at the substrate temperature over 780 ℃,sputtering pressure from 11 Pa to 160 Pa. In addition, the metallic substrates began to be oxidized in the process of annealing. At 780 ℃ under the total pressure of 100 Pa, the pure （001） orientation film was obtained, and the full width half maximum （FWHM） of the φ-scan of YBCO was less than 10°The critical temperature of YBCO film was 87.2 K, and its transport current was 11 A.

关 键 词：YBCO 溅射 衬底 织构 

分 类 号：TM26[一般工业技术—材料科学与工程]