金属连线光刻技术  

The Technology of Printing Metal Interconnection

作　　者：刘旸[1] 唐冬[1] 

机构地区：[1]中国电子科技集团公司第四十七研究所,沈阳110032

出　　处：《微处理机》2007年第2期14-15,19,共3页Microprocessors

摘　　要：介绍了一种细线条金属连线光刻技术。在溅射铝后,生长一薄层氮化硅薄膜作为减反层,利用氮化硅薄膜的光刻条件,涂覆薄胶可以保证刻出细线条,腐蚀薄层氮化硅保证线宽,同时在腐蚀铝过程中用氮化硅作掩蔽解决了薄胶问题。并在亚微米的抗辐射加固电路中成功应用。This article elaborated the technology of printing narrow metal interconnection. After aluminum deposition, a thin layer of Si3 N4 was deposited as Anti - layer reduced. Due to Si3 N4 thin layer lithography condition, it was possible to print small line width by applying a thin layer of photoresist. The reason of using Si3 N4 as a protect layer was to provide line width and solve the problem of thin photoresist. We have applyed it in submicron radiation -hard circuit successfully.

关 键 词：线宽 薄胶 减反层 

分 类 号：TN4[电子电信—微电子学与固体电子学]