Effect of inter-layer strain interaction on the optical properties of Ge/Si(001) island multi-layers  

作　　者：M. De Seta G. Capelllini F. Evangelisti C. Ferrari L. Lazzarini G. Salviati R. W. Pengs S.S.Jiang 

机构地区：[1]Dipartimento di Fisica, Universita di Roma 3, Via della Vasca Navale 84, 00146 Roma, ltaly [2]IMEM-CNR Institute, Parco Area delle Scienze 37/A, 43010 Fontanini, Parma Italy [3]National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China

出　　处：《Optoelectronics Letters》2007年第3期173-176,共4页光电子快报（英文版）

摘　　要：In this paper we present a study on the influence of the number and the thickness of silicon spacer layer on the optical properties of single-and multi-layers of self assembled Ge/Si(001) islands performed by means of cathodoluminescence spectroscopy,high resolution X-ray diffraction and transmission electron microscopy. In single-layer sample,we do not evidence dependence of the island no-phonon emission peak position on the silicon cap-layer thickness. In multi-layer samples having a thin(33 nm) silicon spacer layer the no-phonon emission energy value progressively blue-shifts for an increasing number of island layers. This is interpreted as an enhanced intermixing driven by the strain interaction existing between island layers. On the contrary,island emission energy position is independent on the number of layers in the sample series having a thicker spacer layer(60 nm) . These findings are consistent with the X-ray diffraction observation that islands belonging to different layers have the same composition. As a consequence we can conclude that multilayers with 60-nm spaced islands layer are more homogeneous and ordered.

关 键 词：层间应变作用 锗/硅(001)多层纳米岛 光学性能 自组装 

分 类 号：TN304[电子电信—物理电子学]