Silicon Geiger mode avalanche photodiodes  

作　　者：M. Mazzillo G. Condorelli D. Sanfilippo G. Fallica E. Sciacca S. Aurite S. Lombardo E. Rimini M. Belluso S. Billotta G. Bonanno A. Campisi L. Cosentino P. Finocchiaro F. Musumeci S. Privitera S. Tudisco 

机构地区：[1]STMicroelectronics,R&D MPA,Stradale Primosole 50,95121 Catania,Italy. [2]CNR-IMM,Stradale Primosole 50,95121 Catania,Italy. [3]Osservatorio di Astrofisica,Via Santa Sofia 78,95123 Catania,Italy. [4]INFN-Laboratori Nazionali del Sud,Via Santa Sofia 64,95125 Catania,Italy. [5]DMFCI,Università di Catania,Viale Andrea Doria 6,95125 Catania,Italy.

出　　处：《Optoelectronics Letters》2007年第3期177-180,共4页光电子快报（英文版）

摘　　要：In this letter we present the results regarding the electrical and optical characterization of Geiger mode silicon avalanche photodiodes(GMAP) fabricated by silicon standard planar technology. Low dark count rates,negligible afterpulsing effects,good timing resolution and high quantum detection efficiency in all the visible range have been measured. The very good electro-optical performances of our photodiodes make them attractive for the fabrication of arrays with a large number of GMAP to be used both in the commercial and the scientific fields,as telecommunications and nuclear medical imaging.

关 键 词：硅雪崩光电二极管 盖革模式 电学特性 光学特性 

分 类 号：TN312.7[电子电信—物理电子学]