PTCDA表面射频磁控溅射ITO薄膜的特性研究  

Study of ITO Thin Film Deposited on PTCDA by RF Magnetron Sputter

作　　者：孙硕[1] 胥超[1] 冯煜东[1] 肖剑[1] 张福甲[1] 

机构地区：[1]兰州大学物理科学与技术学院,甘肃兰州730000

出　　处：《光电子．激光》2007年第5期529-532,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60676010);甘肃省自然科学基金资助项目(3zs041-A25-001)

摘　　要：将氧化铟锡(ITO)溅射淀积在PTCDA/玻璃衬底表面,利用原子力显微镜(AFM)、四探针和紫外可见分光光度计分别测量薄膜的表面形貌、电阻率和透光率。结果表明衬底温度对ITO在PTCDA上的淀积有着与在其他衬底上淀积所不同的影响,提高衬底温度淀积ITO并没有提高薄膜的结晶度;溅射功率的提高有利于ITO电阻率的下降,但是功率过高会破坏ITO薄膜的特性ITO膜厚度的增加导致其电阻率减小。Indium tin oxide（ITO） thin film is deposited on PTCDA/glass substrate by RF magnetron sputter. The thin film＇s surface morphology,resistivity,transmittance were measured by AFM,4 point probe and UV speetrophotometer. The results showed that the substrate temperature has different effect on ITO thin film deposited on PTCDA than any other materials ,it is impossible to raise the crystallinitry of ITO thin film by raising the substrate temperature. Although raising sputtering power is advantageous,the outrageous power will damage the ITO thin film＇s characteristics. The increasing of ITO thin filmrs thickness will depress the resistivity.

关 键 词：氧化铟锡(ITO) PTCDA 电阻率 透光率 

分 类 号：TN304[电子电信—物理电子学] O484.4[理学—固体物理]