碳掺杂TiO_2的制备及光电性质的研究  

Preparation and characterization and photoelectric properties of C-doped TiO_2

作　　者：林华盛[1] 张宁[1] 陈超[1] 宋丽丽[1] 

机构地区：[1]南昌大学理学院化学系,南昌330031

出　　处：《化工新型材料》2007年第5期27-29,共3页New Chemical Materials

基　　金：国家自然科学基金项目(20562007)

摘　　要：采用溶胶-凝胶法制备纳米TiO2,经活性炭程序还原制备TiC,并在空气中煅烧制得碳掺杂的TiO2。采用XRD、UV-vis以及电化学等手段对其进行了表征和测试。实验结果表明,碳掺杂减小了TiO2的禁带能隙,使它的光电特性得到了较大改善,光响应波长发生了红移,光响应电流显著增强。The C-doped TiO2 was prepared by oxidative annealing of TiC which was synthesized through carbothermal reduction of TiO2. The effect of C-doping on the crystal structure and light absorbing ability of TiO2 was investigated by XRD, UV-vis spectrum and electrochemistry analyses, which indicated that the doping of TiO2 expanded the light-responding scope,and increased its photocurrent intensity.

关 键 词：TIO2 TIC 碳掺杂 光电特性 

分 类 号：O614.411[理学—无机化学]