CeO_2:Eu^(3+)薄膜的制备及其发光性能研究  

Preparation and Photoluminescence of CeO_2:Eu^(3+) Films

作　　者：刘晓华[1] 王孝东[1] 陈图锋[2] 陈绍军[1] 刘敏[1] 

机构地区：[1]汕头大学物理系,广东汕头515063 [2]汕头大学中心实验室,广东汕头515063

出　　处：《汕头大学学报（自然科学版）》2007年第2期38-42,52,共6页Journal of Shantou University：Natural Science Edition

基　　金：广东省自然科学基金资助项目(No:04010998);人事部留学人员科技活动项目择优资助经费;教育部回国留学人员基金资助项目

摘　　要：采用Pechini法制备Eu3+掺杂的CeO2:Eu3+薄膜.利用X射线衍射(XRD)﹑原子力显微镜(AFM)和光致荧光光谱(PL)对样品进行表征.结果表明:薄膜样品在700℃就结晶成纯面心立方萤石结构的多晶薄膜;PL激发谱中,300～360 nm的宽带激发峰起源于基质CeO2的吸收.CeO2： Eu^3＋ phosphor films with various Eu^3＋ concentrations were prepared by the Peehini method. X-ray diffraetion（XRD）, atomic force mieroseopy（AFM） and Photolumines- eenee（PL） measurements were used to characterize the samples. XRD analysis shows that the films with pure cubic-fluorite structure is obtained at the sintered temperature 700 ℃. The PL excitation band at 300-360 nm is due to the charge transfer from O2^- to Ce^4＋ and subsequent energy transfer to Eu^3＋ in the films.

关 键 词：CeO2:Eu^3+薄膜的制备及其发光性能研究 

分 类 号：O614.3[理学—无机化学]