掺杂对锗纳米晶薄膜电输运的影响  

Effect of Doping on Electron-Transport Properties of Ge Nanocrystals Embedded Structure

作　　者：张盛华[1] 卢铁城[2] 敦少博[2] 胡强[2] 赵建君[2] 何捷[2] 

机构地区：[1]桂林医学院物理教研室,广西桂林541004 [2]四川大学物理系辐射物理及技术教育部重点实验室,成都610064

出　　处：《汕头大学学报（自然科学版）》2007年第2期47-52,共6页Journal of Shantou University：Natural Science Edition

摘　　要：利用离子注入然后退火的方法制备镶嵌有锗纳米晶的二氧化硅复合膜,再利用中子嬗变方法,对镶嵌有锗纳米晶的二氧化硅复合膜进行精确均匀掺杂,用激光拉曼散射测量表征锗纳米晶的存在,测量嬗变掺杂前后样品的I-U曲线和lnR-1/T曲线.结果表明:掺杂样品未退火时电阻极大,退火后电阻明显减小,但比未掺杂时大;其它条件相同时,锗的注入量越大,纳米晶层的电阻越小;在掺杂样品的低温I-U曲线中发现台阶.Ge nanocrystals samples were fabricated by Ge ion implantation and subsequent annealing. The sample was doped precisely and homogeneously with neutron transmutation doping（NTD）. Ge nanocrystals were measured by Laser Raman scattering. The I-U curve and InR-1/T curve of them were measured, and the related Electron-Transport properties of doping sample were studied. The results indicate that the resistance of doping sample is extremely large before annealed and the resistance is decreased after sample annealed but is also larger than the resistance of undoped and annealed. In addition, the resistance of doping sample is decreased with increasing injecting quantity. A step structure is observed in the I-U curve of doped sample at low temperature.

关 键 词：锗纳米晶 中子嬗变掺杂 电输运 

分 类 号：O484.3[理学—固体物理]