Si(111)衬底上IBE法外延生长β-FeSi_2薄膜的研究  

Study on Iron Dissilicide (β-FeSi_2) Epitaxial Thin Films on Si(111) Substrate by Mass-Analyzed Low-Energy Ion Beam Epitaxy

作　　者：李慧[1] 马辉 丁维清 秦复光[2] 

机构地区：[1]北京师范大学分析测试中心,北京100875 [2]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》1997年第4期264-268,共5页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文采用质量分析的低能离子束外延法（以下简称IBE法）在Si（111）衬底上外延生长了β-FeSi2薄膜，并进行了X射线衍射测量分析；与扫描电镜配合验证了β-FeSi2外延薄膜的形成．实验结果表明：所得β-FeSi2（101）或（110）面基本平行于Si（111）面，验证了Si（111）上β-FeSi2外延薄膜的形成；并对失配度做了精确的计算；薄膜形貌呈岛屿状分布，同时分析了生长条件对薄膜形貌的影响．The Low Energy ion Beam Epitaxiay (IBE) technique has been used for preparing β-FeSi2, thin films epitaxially grown on St (111) substrates and the films have been analyzed by X-Ray Diffraction. The results testified by the formation of epitaxial β-FeSi2, film on Si (111) combined with SEM have, inicated that β-FeSi2 (101) or (110) planes approximately parallel to Si (111) plane. The lattice misfit has been calculated precisely. The film's morphology is islanding. The effect of growing conditions on the film's morphology is analyzed.

关 键 词：外延生长 半导体材料 硅 衬底 薄膜 

分 类 号：TN304.054[电子电信—物理电子学]