低相变温度垂直取向的CoPtCu/Ag纳米复合膜  

Low-temperature ordered CoPtCu/Ag nanocomposite film with (001) texture

作　　者：薛双喜[1] 王浩[2] S.P.Wong 

机构地区：[1]台州学院物理与电子工程学院,临海317000 [2]湖北大学物理学与电子技术学院暨纳米技术研究中心,武汉430062 [3]香港中文大学电子工程系

出　　处：《物理学报》2007年第6期3533-3538,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:50371056)资助的课题~~

摘　　要：采用磁控溅射(Ag/Cu/CoPt)n多层膜先驱体结合真空退火的方法制备了一系列CoPtCu/Ag纳米复合薄膜,通过优化薄膜中Ag以及Cu的含量,成功制备出了低相变温度垂直取向的CoPtCu/Ag纳米复合膜,该膜在450℃退火即可发生相变,该温度比目前所报导的CoPtAg纳米复合膜的相变温度降低了150℃.实验结果表明,薄膜中一定含量的Ag元素能够有效诱导薄膜的(001)取向,Cu元素的加入能有效降低薄膜的有序化温度.对于特定组分为Co40Pt36Cu8Ag16的薄膜,经500℃退火后已经显示了明显的(001)取向,垂直于膜面方向上的矫顽力为5.0×105A/m,并且薄膜中晶粒尺寸仅为4—5nm,为将来CoPt-L10有序相合金薄膜用于超高密度垂直磁记录介质打下了基础.CoPtCu/Ag nanocomposite films have been prepared using CoPt/Cu/Ag muhilayer precursor by magnetron sputtering and subsequent vacuum thermal annealing. Low-temperature ordered CoPtCu/Ag nanocomposite films with （001） texture have been prepared successfully with the optimized content of Ag and Cu in the films. The CoPtCu/Ag films start ordering at a low annealing temperature of 450℃, which is roughly lower by 150℃ than that needed for most CoPt-based films. Our present study shows that the Ag plays a dominant role in inducing the （001） texture of the film and the Cu additive is very effective to reduce the ordering temperature in CoPtAg system. The Co4o Pt36 Cu8 Ag16 film after annealing at 500℃ exhibits a large perpendicular coercivity of 5.0 × 10^5 A/m with a small average grains size of 4-5 nm, implying the potential of the films as future ultrahigh density magnetic recording media.

关 键 词：磁记录材料 COPT 纳米复合膜 

分 类 号：O484.43[理学—固体物理]