SAPMAC法生长大尺寸蓝宝石单晶工艺研究  

Study on the technology of large size sapphire single crystal growth by SAPMAC

作　　者：姚泰[1] 左洪波[1] 孟松鹤[1] 韩杰才[1] 张明福[1] 李常青[1] 许承海[1] 

机构地区：[1]哈尔滨工业大学复合材料与结构研究所,哈尔滨150001

出　　处：《哈尔滨工业大学学报》2007年第5期794-796,共3页Journal of Harbin Institute of Technology

摘　　要：采用冷心放肩微量提拉法（SAPMAC法）在真空条件下，选择〈1010〉方向的籽晶成功生长了尺寸为φ220×200mm的大尺寸蓝宝石晶体，生长时结晶区温度梯度为0．5—1．0℃／mm，生长速度为0．1-2mm／h．对生成晶体的透射率进行了检测，测试结果表明在2500—4000cm^-1范围内，1mm厚度蓝宝石晶片的透过率达85％以上．Aφ220 ×200 mm sapphire crystal, with 〈 1010 〉 oriented had been grown by sapphire growth technique with micro-pulling and shoulder at cooled center （SAPMAC） method. In the research, the temperature gradient of the crystallization region was 0. 5 - 1.0 ℃/mm and the growth velocity was 0. 1 -2 mm/h in vacuum environment. The result shows the transmission of the sapphire slice with 1 mm thickness is at least 85% in the range from 2 500 to 4 000 cm^-1.

关 键 词：冷心放肩微量提拉法 蓝宝石单晶 透过率 

分 类 号：O782.9[理学—晶体学]