LiNbO_3铁电畴结构扫描力显微镜表征  

Characterization of Ferroelectric Domain Structures of LiNbO_3 Wafer by Scanning Force Microscopy

作　　者：彭晶[1] 包生祥[1] 马丽丽[1] 王艳芳[1] 

机构地区：[1]电子科技大学材料分析中心,四川成都610054

出　　处：《压电与声光》2007年第3期338-339,共2页Piezoelectrics & Acoustooptics

基　　金：国防科工委共性基金资助项目

摘　　要：为了分析评价铌酸锂(LiNbO3)单晶单畴化的效果,应用扫描力显微镜(SFM),对LiNbO3单晶片的电畴微观结构进行了分析表征。由于在压电力模式下,电畴的成像受到了样品本身结构的影响,畴图中出现的图像结构多与划痕相关。电畴的图像结构随着电压的加大越趋明显,可以断定,检测信号的确为样品本身压电响应。实验中对厚为1 mm的LiNbO3单晶加10 V直流偏压2 min,极化强度发生改变,但远没达到反转电压。这些对电畴结构的表征为表面加工工艺的改进提供了微观分析依据。For evaluation of the processing technic for single domain, ferroelectric domain structures of the LiN- bO3 crystal wafer was studied in this paper by scanning force microscopy. As the surface topography has great effect on the characterization of the domain structures, the potential distribution results meet with the surface topography in some degree. When the voltage was applied to the tip changed, the electric potential in the LiNbO3 wafer surface changed as well, so the potential distribution really influence the ferroelectric domain structures in the LiNbO3 crys- tal wafer, Those analysis outcomes give support to the improvements on the processing parameters and technological operatlons.

关 键 词：铌酸锂晶体 畴结构 扫描力显微镜(SFM) 

分 类 号：O785[理学—晶体学]