n-CdSe/Fe(CN)_6^(4^-/3^-)光阳极上的光氧化竞争反应及用L-B技术修饰电极的影响  

THE COMPETITIVE PHOTO-OXIDATION AT n-CdSc/Fe(CN)_6^(4-/3-) PHOTOANODE AND THE INFLUENCES OF MODIFICATION BY L-B TECHNIQUE

作　　者：刘顺林[1] 钱道荪[1] 孙璧媃 

机构地区：[1]上海交通大学应用化学系,上海200030

出　　处：《感光科学与光化学》1990年第4期284-290,共7页Photographic Science and Photochemistry

基　　金：国家自然科学基金

摘　　要：用旋转环盘电极研究了还原剂K_4Fe(CN)_6与n-CdSe光阳极上的竞争空穴的氧化反应,证明还原剂捕获光生空穴的途径为直接自价带俘获空穴。又利用L-B技术在n-CdSe电极表面修饰硬脂酸二茂铁酯,结果表明还原剂俘获光生空穴的能力增强,电极的稳定系数提高。The competitive oxidation reaction of hole between the reducing agent K4Fe(CN)6 and n-CdSe photoanode was studied by RRDE.The results proved that the photogenerated holes are captured directly from the valence band.After modification of ferrocenylene-octadecanoate L-B films,the competitive oxidation effect of reducing agent is enhanced and the stabilization efficiency of the electrode was increased for about 20%.

关 键 词：dSe L-B 半导体电极 修饰电极 

分 类 号：TN389.052[电子电信—物理电子学]