聚3-氯噻吩修饰CdSe纳米棒复合膜电极光电化学性能研究  

Photoelectrochemical Studies of P3CT Modified CdSe Nanorod Composite Film Electrode

作　　者：郝彦忠[1] 殷志刚[2] 

机构地区：[1]河北科技大学理学院 [2]河北科技大学化学与制药工程学院,石家庄050018

出　　处：《高等学校化学学报》2007年第6期1117-1121,共5页Chemical Journal of Chinese Universities

基　　金：国家自然科学基金(批准号:20573031;20203008);河北省自然科学基金(批准号:202351);河北省教育厅指导性项目(批准号:Z2005203)资助

摘　　要：采用水热法制备了具有闪锌矿和纤维锌矿结构的CdSe纳米棒.纳米棒直径约为100nm,长度约为300nm.当外加电极电势为-0·6V时,经聚3-氯噻吩[Poly(3-chlorothiophene),P3CT]修饰的CdSe纳米棒具有最大光电流,并且CdSe/P3CT复合膜电极最高光电转换效率(IPCE)为13·5%,低于CdSe纳米棒膜电极17·7%的最高IPCE.CdSe/P3CT复合膜电极中存在p-n异质结,p-n异质结的存在使得CdSe/P3CT复合膜电极在长波区(>410nm)的IPCE整体高于CdSe纳米棒薄膜电极的IPCE.CdSe nanorods （zinc blende and wulitize） were prepared via hydrothermal method. The CdSe nanorod was formed with a diameter about 100 nm and a length about 300 nm. The photoelectrochemical pro-perties of the CdSe nanorods/P3CT composite film electrode were investigated. The results show that the maxi-mum value of photocurrent appeared at an electrode potential of -0.6 V. The maximum IPCE（ 13.5% ） of the modified film electrode was lower than that of 17.7% CdSe nanorord film electrode. The p-n heterojunc-tion was existed in the CdSe/P3CT composite film electrode. Because of the existence of p-n heterojunction, under certain condition the IPCE of P3CT modified CdSe nanorod was larger than that of CdSe film electrode in the whole long wavelength region （ 〉410 nm）.

关 键 词：聚3-氯噻吩 CdSe/P3CT复合膜电极 光电化学 

分 类 号：O644[理学—物理化学]