SPS制备碳化硅陶瓷的研究  

PREPARATION OF SILICON CARBIDE BY SPARK PLASMA SINTERING

作　　者：赵珍[1] 何新波[1] 曲选辉[1] 张勇[1] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083

出　　处：《粉末冶金工业》2007年第3期28-32,共5页Powder Metallurgy Industry

基　　金：国家自然基金项目(50404012)

摘　　要：本文用放电等离子烧结(SPS)的方法制备了SiC陶瓷,研究了SPS烧结温度、压力和保温时间对烧结试样力学性能的影响。结果表明,随着烧结温度的升高,烧结试样的密度和硬度增加,当温度超过1600℃后,密度和硬度不再增加,反而有稍微的下降,而断裂韧度和弯曲强度则随温度的升高而提高;随着压力的增大和保温时间的延长,样品的致密度和力学性能均提高。当温度为1700℃、压力为50MPa、保温时间为5min时,烧结样品的密度达3.280g/cm3,维氏硬度达25.0GPa,断裂韧度达8.34MPa.m1/2、弯曲强度达684MPa。The silicon carbide sintering temperature, time ceramic was pre and pressure on were studied. The result showed that with hardness of the product increases at first and pared by Spark Plasma Sintering（SPS）. The effects of density and mechanical properties of sintered products the increase of sintering temperature the density and decreases slightly after the temperature is over 1600℃, while bending stress and fracture toughness increase gradually. However, with the increase of pressure and time the mechanical properties of product increase. When the temperature was 1700℃, the pressure was 50MPa, the dwelling time was 5min, the product with density of 3.280g/cm^3 , hardness of 25GPa, fracture toughness of 8. 34MPa · m^1/2 , bending stress of 684MPa was obtained.

关 键 词：碳化硅陶瓷 放电等离子烧结 力学性能 

分 类 号：TF124.5[冶金工程—粉末冶金]