一种新型高精度CMOS电压基准源  

New High Precision CMOS Voltage Reference

作　　者：彭伟[1] 谢海情[1] 邓欢[2] 

机构地区：[1]湖南大学物理与微电子科学学院,长沙410082 [2]湖南大学计算机与通信学院,长沙410082

出　　处：《电子器件》2007年第3期863-865,共3页Chinese Journal of Electron Devices

摘　　要：在分析MOS管电流电压的温度特性的基础上,基于对两个连接成二极管形式的对称NMOS管通以不同大小的PTAT电流,NMOS管的栅压将向不同方向变化这一原理,通过对这两个NMOS管的栅压进行相互补偿,设计了一种新型的CMOS基准电压源.电路采用TSMC0.18μmCMOS工艺进行设计,基于BSIM3V3模型,利用Cadence的Spectre工具对电路进行仿真.结果表明:当电源电压VDD=1.2V时,其温度系数仅为28×10-6/℃.According to the analysis of current and voltage temperature-characteristic of NMOS transistor, the gate-source voltage of two similar diode-connected NMOS transistor biased with two different PTAT current source is able to obtain different temperature coefficient. Under the compensation of the two gate- source voltage, a new CMOS voltage reference was designed. The circuit was designed by TSMC 0. 18 μm CMOS process, and simulated by Cadence Spectre using BSIM3V3 model. The results indicated that when VDD is equal to 1.2 V the temperature coefficient was only 28×10^-6/℃.

关 键 词：基准电压源 PTAT电流 温度系数 CMOS 

分 类 号：TN431.1[电子电信—微电子学与固体电子学]