基于CMOS工艺的音频前置放大器的设计与实现  

Design of a Audio-Preamplifier by CMOS Technology

作　　者：王卉[1] 王小军[2] 马骏[1] 

机构地区：[1]杭州电子科技大学CAD研究所,杭州310018 [2]杭州电子科技大学通信工程学院,杭州310018

出　　处：《电子器件》2007年第3期870-873,共4页Chinese Journal of Electron Devices

基　　金：电子发展基金项目资助(KY52401701)

摘　　要：设计了一种基于CMOS技术的双声道四输入音频前置放大器芯片.芯片集成了音量控制、响度控制、可选择增益控制等功能,采用I2C介面控制,具有低失真、高可靠度等特点.放大器采用新颖的双级CMOS放大器结构,该结构简单,开环输出增益高,共模输入范围大,只有一个频率补偿电容.芯片根据国内生产线而设计制造,在ACSMC的3μm9V高压CMOS工艺线上流片,版图面积为3.0mm×2.6mm,样片经用户测试符合设计要求,可以产业化.An audio-preamplifier with 4 inputs and two tracks is designed, which adopts I^2C interface comrol and has a characteristic of low distortion and high reliability. A novel dual-stage amplifier structure is applied in the paper. It has the advantages of simple structure, high open-loop gain, high common-mode range and needs only a frequency compensation capacitors. The audio-preamplifier is designed according to domestic foundry and implemented in 3.0 μm 9 V CMOS process with a layout area of about 3. 0 mm × 2. 6 rnrn. The sample passes user＇s test and meets the design requests.

关 键 词：前置放大器 音频 互补型金属氧化物半导体工艺 双声道 

分 类 号：TN431.1[电子电信—微电子学与固体电子学]