无催化热蒸发ZnS粉末制备半导体ZnO纳米带  

Growth of ZnO nanowires by free-catalytic thermal evaporation of ZnS powder

作　　者：武祥[1] 隋解和[1] 蔡伟[1] 

机构地区：[1]哈尔滨工业大学材料科学与工程学院,黑龙江哈尔滨150001

出　　处：《功能材料》2007年第6期868-869,共2页Journal of Functional Materials

摘　　要：通过无催化物理热蒸发ZnS粉末的方法首次制备了互相平行交叉的纤锌矿ZnO纳米带,X射线衍射分析和扫描电镜检测显示所制得的ZnO纳米带沿着它们的长度是平滑而单一的纤锌矿结构。合成的纳米带长度数十微米,宽度几百纳米。同时对纳米带的生长机制作了详细讨论。Parallel intersect wurtzite ZnO nanowires has been achieved firstly by free-catalytic thermal evaporation of ZnS powder onto Si substract. A Vapor-Solid process is proposed for the formation of ZnO nanostructures. XRD analysis and SEM observations revealed the nanowires were smooth and uniform throughout their length and perfectly single crystalline with wurtzite ZnO nanostructures. The as-synthesized nanowires have a length of several tens of micrometers and a width of several hundreds of nanometers. The growth mechanisms of these as-synthesized ZnO nanowires are also discussed.

关 键 词：准一维纳米结构 半导体 热蒸发 纳米带 

分 类 号：TN304.05[电子电信—物理电子学]