晶体三极管功耗的研究  

Study on the Power Dissipation of BJT

作　　者：周宦银[1] 刘家华[1] 李莉[1] 

机构地区：[1]防化指挥工程学院,北京102205

出　　处：《现代电子技术》2007年第12期38-40,共3页Modern Electronics Technique

摘　　要：晶体三极管的损坏大多是由于功耗过大所致,正确地计算三极管的功耗是三极管选择的关键。现行教材对晶体三极管功耗的公式是不够严密的。提出了三极管功耗严密的计算公式,并用理论分析和仿真实验的方法对两个公式进行比较,研究表明现行教材上的公式不准确,而这里提出的公式是准确严密。The damage of （Bipolar Junction Transistor,BJT） is mostly on account of too large power dissipation. Calculating the power dissipation accurately is the key of choosing BJT. The way of calculating the power dissipation in text books is not strict. This paper points out an accurate formula,compares the two formulas with theory analyzing and simulation experi ment. The study shows that the formula in textbooks is inaccurate but the formula pointed in this paper is accurate and strict.

关 键 词：三极管 功耗 比较 实验 

分 类 号：TN32[电子电信—物理电子学]