一种新颖的半圆形缺陷地结构微带线  

A Novel Semicircle Defected Ground Structure for Microstrip Line

作　　者：林水洋[1] 顾建忠[1] 田为中[1] 孙晓玮[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《电子学报》2007年第6期1174-1177,共4页Acta Electronica Sinica

基　　金：上海市自然科学基金项目(No06ZR14103)

摘　　要：本文提出了一种半圆缺陷地结构(Defected Ground Structure)微带线,该结构比传统的正方形DGS微带线有更好的带阻特性和等效Q值.本文分析了半圆DGS参数变化对带阻特性的影响,建立了该微带线的等效电路模型并提取参数;通过等效电路模型可以看出,半圆DGS微带线的Q值为45,大大优于传统DGS微带线的8.5.最后,本文设计了紧凑结构半圆DGS低通滤波器,由于半圆DGS微带线的高Q值,该滤波器的通带插入损耗小于0.2dB,其测试结果与仿真结果相当吻合,验证了所提结构的可靠性.A novel semicircle defected ground structure for microstrip line is proposed. It can provide more effectual bandgap property than traditional one can do. After discussing the effects of the proposed DGS dimensions on bandgap property, equivalent circuit modeling for the proposed DGS microstrip line is built and its parameters are extracted. Considering their equivalent circuit models, I find the quality factor Q of the proposed DGS microstrip line is 45,which is much higher than the traditional one＇s 8.5. Finally, a compact SDGS low-pass filter is simulated and measured. Due to the SDGS microstrip line＇ s high Q factor, the filter＇ s insertion loss in the passband is smaller than 0.2dB,The validity of the SDGS filter is verified by the agreement between simulated and measured results.

关 键 词：光子晶体 缺陷地结构 带阻特性 低通滤波器 微带线 

分 类 号：TN45[电子电信—微电子学与固体电子学] TN713