ZnO压敏陶瓷实际Bi元素的含量  

Study of ZnO varistor ceramics in relation to their true bismuth content

作　　者：牟国栋[1] 

机构地区：[1]西安科技大学 材料科学与工程系,陕西西安710054

出　　处：《兰州大学学报（自然科学版）》2007年第3期106-109,共4页Journal of Lanzhou University(Natural Sciences)

摘　　要：建立了压敏陶瓷实际Bi元素含量检测品质的控制方法,讨论了烧结方式、温度及保温时间对Bi元素挥发量的影响,研究了实际Bi元素含量对压敏陶瓷显微结构、电性能的影响．实验表明,采用电感耦合等离子体光学发射光谱仪检测样品Bi元素含量,实际检测极限为1．0×10-6．通过优化烧结,有效控制了Bi元素挥发,从而获得均匀的显微结构和预定晶界,得到电学性能优良的ZnO压敏陶瓷．A quality control testing method for the true bismuth content in varistor ceramics was established. The Effect of the sintering method, temperature and soaking time on the vaporization of bismuth were discussed and the effect of true bismuth content on microstructure and electrical properties of varistor ceramics was studied. The experiments show that the detective limit was 10^-6 with the Inductively Coupled Plasma- Optical Emission Spectral analyzing the bismuth content of the samples. Through optimizing sintering, the vaporization of bismuth was effectively controlled, and homogeneous microstructure and expected grain boundary were obtained. Finally, appropriate electrical properties of ZnO varistor ceramics were realized.

关 键 词：氧化锌压敏陶瓷 Bi元素 烧结 电性能 

分 类 号：TN304.93[电子电信—物理电子学]