半模基片集成波导和微带转换的分析  

Analysis of the transition between half mode substrate integrated waveguide and transition

作　　者：丛志鹏[1] 李平辉[1] 赵亮[1] 王祖静 

机构地区：[1]解放军理工大学通信工程学院 [2]解放军73686部队

出　　处：《解放军理工大学学报（自然科学版）》2007年第3期234-238,共5页Journal of PLA University of Science and Technology(Natural Science Edition)

摘　　要：为实现基片集成波导结构的小型化,沿场分布对称面将其截成两半,利用等效磁壁限制场型变化,提出了半模基片集成波导结构。在此基础上,研究了半模基片集成波导与微带线的转换问题,并设计Ku波段的半模基片基层波导—微带线转换结构。仿真结果表明,在所设计的频段内,插损优于0.5 dB,反射损耗小于-15 dB,实测结果与仿真结果基本吻合。实验表明,半模基片集成波导能够保持基片集成波导的传播特性。To realize the miniaturization of SIW （substrate integrated waveguide） structure, HMSIW （half mode substrate integrated waveguide） was proposed by cutting off SIW by half. HMSIW used magnetic wall to confine the electric field distrbution. Then the transition between HMSIW and micro-strip was studied, and a Ku-band of this transition structure was designed. The simulation results show that the insertion loss excelled 0. 5 dB and return losses less than -15 dB in the designed frequency band, and the measured results accord well. Results also show that this HMSIW structure can keep the propagation characteristics of SIW and can be applied widely.

关 键 词：半模基片集成波导 磁壁 微带 转换器 

分 类 号：TN817[电子电信—信息与通信工程]