Metamorphic In_(0.53)Ga_(0.47)As p-i-n photodetector grown on GaAs substrates by low-pressure MOCVD  

作　　者：王琦 吕吉贺 焦德平 周静 黄辉 苗昂 蔡世伟 黄永清 任晓敏 

机构地区：[1]Key Laboratory of Optical Communication & Lightwave Technologies,Ministry of Education,Beijing University of Posts and Telecommunications [2]Key Laboratory of Optical Communication & Liggtwave Technologies,Ministry of Education,Beijing University of Posts and Telecommunications

出　　处：《Chinese Optics Letters》2007年第6期358-360,共3页中国光学快报（英文版）

基　　金：This work was supported by the National Basic Research Program of China(No.2003CB314901);the 111 Project(B07005);the Program for New Century Excellent Talents in University of China(NCET-05-0111).

摘　　要：Top-illuminated metamorphic In0.53Ga0.47As p-i-n photodetectors are grown on the ultrathin low- temperature InP buffered GaAs substrates. Photodetectors with the 300-nm-thick In0.53Ga0.47As absorption layer show a typical responsivity of 0.12 A/W to 1.55μm optical radiation, corresponding to an external quantum efficiency of 9.6%. Photodetectors with the active area of 50 × 50 （μm） exhibit the -3 dB bandwidth up to 6 GHz. These results are very encouraging for the application of this metamorphic technology to opto-electronic integrated circuit （OEIC） devices.Top-illuminated metamorphic In0.53Ga0.47As p-i-n photodetectors are grown on the ultrathin low- temperature InP buffered GaAs substrates. Photodetectors with the 300-nm-thick In0.53Ga0.47As absorption layer show a typical responsivity of 0.12 A/W to 1.55μm optical radiation, corresponding to an external quantum efficiency of 9.6%. Photodetectors with the active area of 50 × 50 （μm） exhibit the -3 dB bandwidth up to 6 GHz. These results are very encouraging for the application of this metamorphic technology to opto-electronic integrated circuit （OEIC） devices.

关 键 词：Bandwidth Integrated circuits Metallorganic chemical vapor deposition Optoelectronic devices Quantum efficiency Semiconducting gallium arsenide Semiconducting indium phosphide 

分 类 号：TN304.05[电子电信—物理电子学]