Mg^(2+)在金属-电介质复合材料中的掺杂研究  

Doping of Mg in Metal Dielectric Composites of BaTiO_3

作　　者：李玲霞[1] 王大鹏[1] 郭锐[1] 王洪儒[1] 孟旭东[2] 李慧灵[2] 

机构地区：[1]天津大学,天津300072 [2]河北北方学院,河北张家口076500

出　　处：《稀有金属材料与工程》2007年第6期1051-1054,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(50472064);天津市基金项目(05YFJMJC09300)资助

摘　　要：研究了镁离子在金属-电介质复合材料中的改性作用。通过SEM、EDS、XRD等分析手段综合得出Mg2+取代了BaTiO3晶格中B位的Ti4+,并使置换出来的Ti4+在样品表面形成富集。介电性能分析证明Mg2+可以明显降低系统介电损耗,展宽并压低居里峰。当Mg2+添加量为0.9%(摩尔分数),系统介电常数高达11395,介电损耗为0.006,并在–55～150℃范围内容量变化率<±10%。The improvements of dielectric properties were researched by means of SEM, EDS and XRD for the metal-dielectric composite of alkaline magnesium carbonate. It can be concluded that the Mg^2＋ replaced B position （Ti^4＋） in BaTiO3 lattice, and made the replaced Ti enriched on the sample surface. With analysis on the dielectric properties, it is proved that the Mg^2＋ can evidently reduce the dielectric loss of system, spread and lower the curie peak. When the amount of Mg^2＋ is 0.9 mol%, the systematic dielectric constant is up to 11395, the dielectric loss is less than 0.006, and the capacitance temperature percentage is less than ＋10% between -55℃ and 150℃.

关 键 词：金属 电介质 掺杂 晶格常数 B位取代 

分 类 号：TB33[一般工业技术—材料科学与工程]