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作 者:贺英[1] 王均安[2] 桑文斌[3] 高利聪[1] 周利寅[1]
机构地区:[1]上海大学材料科学与工程学院高分子材料系,上海200072 [2]上海大学微结构研究重点实验室,上海200444 [3]上海大学材料科学与工程学院电子信息材料系,上海200072
出 处:《化学学报》2007年第12期1155-1160,共6页Acta Chimica Sinica
基 金:上海市教委自然科学基金(No.03AK30);上海市教委重点科研项目(No.07ZZ13)资助项目.
摘 要:研究了以极性高分子(如聚丙烯酰胺)长分子链作为自组装网络,利用高分子软模板控制ZnO纳米点成核和ZnO纳米线定向生长,从而使ZnO纳米线在半导体硅衬底上自组装生长的过程;采用差示扫描量热法(DSC)测试了高分子络合-烧结法制备ZnO纳米线的结晶曲线,对其结晶动力学进行了研究,推导出结晶动力学方程为:1-Xt=exp(-7.475×10-2t1.9);并利用热重(TG)测试结果,通过热分解反应,导出了反应动力学方程:dα/dT=3.76×1023e-21340.8/T(1-α)2.8/φ,从而得到了化学反应速度随时间、浓度和温度变化的关系,并用结果解释了实验现象.Zinc oxide (ZnO) nanowires were grown on silicon substrate by using polar polymer (such as PAM) long-chain as self-assembling grid backbone via polymer soft-template controlling nucleation of ZnO nanodots and oriented growth of ZnO nanowires. The kinetics of the crystallization of ZnO nanowires and the thermal decomposition of the complex PAM-Zn^2+ during preparation were investigated by means of differential scanning calorimetry (DSC) and thermogravimetry (TG), and the relationship between the reaction rate and time, concentration and temperature were obtained,1-Xt=exp(-7.475×10^-2t^1.9) and dα/dT=3.76×10^23/φe^-21340.8/T(1-α)2.8. The calculation results are in good accordance with the experiments. It is found that one dimensional wire-like growth model is in favour of the nucleation and crystal growth behavior of ZnO nanowires, and the ZnO nanowires possess perfect crystal structure.
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