LiF用作阴极注入层的有机发光二极管制备  

Fabrication of organic light-emitting diodes using LiF as a cathode injection layer

作　　者：张靖磊[1] 吴敬[1] 刘彭义[1] 

机构地区：[1]暨南大学理工学院物理系,广东广州510632

出　　处：《暨南大学学报（自然科学与医学版）》2007年第3期272-275,共4页Journal of Jinan University(Natural Science & Medicine Edition)

基　　金：广东省自然科学基金资助项目(06025173)

摘　　要：使用真空热蒸发方法,制备了结构为ITO/TPD/Alq3/LiF/Al的有机发光二极管,其中LiF用作阴极注入层,LiF超薄层的加入,增强了电子注入,降低了启亮电压,提高了器件的发光效率和亮度.实验结果表明:当加入LiF层的厚度为0.5 nm时,器件性能的改善最好,和不含LiF的器件相比,启亮电压由原来的9 V降低到5 V,效率由1.5 cd/A增加到3.3 cd/A,提高了近1倍,然而随着加入LiF层厚度的增加,器件性能的改善效果降低.Organic light-emitting diodes using LiF as a cathode injection layer are fabricated by vapor thermal deposition. The diode with structure of ITO/TPD/Alq3/LiF/Al （ TPD ： N, N＇ - diphenyl- N, N＇ - his （3-methylphenyl） -1,1 ＇ -biphenyl-4, 4＇ -diamine, Alq3 ： tris （ 8-quinolinolato ） - aluminum） performed better electroluminescent properties compared with the diodes without LiF layer. Experimental resuits showed that the insertion of ultra-thin LiF layer enhances the electron injection, reduces the turn-on voltage and improves the luminance and efficiency of diodes. The diode with a 0. 5 nm LiF layer demonstrated the best performance, the turn-on voltage lowers to 5 V and efficiency increases to 3.3 cd/A in comparison with 9 V and 1.5 ccL/A of the diode without LiF layer. However, the performances of diodes become worse with increasing thickness of LiF layer.

关 键 词：有机发光二极管 LIF 电子注入 界面形貌 

分 类 号：TM282[一般工业技术—材料科学与工程] TM221[电气工程—电工理论与新技术]