场发射枪电子光学特性的数值模拟  

Numerical Simulation of Electron Optical Properties of Field Emission Guns

作　　者：刘志雄[1] 沈文忠[1] 西门纪业[1] 

机构地区：[1]北京大学电子学系

出　　处：《电子学报》1997年第5期1-5,10,共6页Acta Electronica Sinica

基　　金：国家自然科学基金;国家教委博士学科点专项科研基金

摘　　要：本文利用改进的电荷密度法（ＣＤＭ）和更接近于实际的阴极工作模型来模拟场发射枪的电子光学性质．文中提出了一种专门的六点求积公式，用它可以精确地计算场发射体表面附近的电位；同时采用了阴极工作在部份空间电荷限制下的球面二极管模型．计算结果表明，这种方法对场发射枪电子光学性质的研究有实际的应用价值．This paper uses an improved charge density method (CDM) and a more realisticcathode operating mode to simulate the electron optical properties of field emission guns. In the paper a special 6-point quadrature formula has been derived to accurately calculate potentials near theemiter surface and a spherical diode model has been adopted with the cathode operating at the partial space charge limitation. The computational results show that the proposed method is applicableto the investigation of electron optical properties of field emission guns.

关 键 词：场发射枪 电子光学 电荷密度法 空间电荷效应 

分 类 号：TN101[电子电信—物理电子学]