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机构地区:[1]浙江大学超大规模集成电路研究所,浙江杭州310027
出 处:《浙江大学学报(工学版)》2007年第6期950-954,共5页Journal of Zhejiang University:Engineering Science
摘 要:采用高温漏电流补偿技术设计了一种工作于-40~130℃的高稳定性低压差(LDO)线性稳压器.通过设计一种新型的动态米勒频率补偿结构,使LDO电路的稳定性与负载电流无关,达到了高稳定性设计要求.芯片设计基于CSMC公司的0.5/μm互补金属氧化物半导体(CMOS)混合信号模型,并通过了芯片测试验证.仿真与测试结果表明,该稳压器的输出电压温度漂移系数为2×10^-5/℃,负载瞬态响应的建立时间小于50ps,输出电压跳变小于50mV.电源抑制比在1kHz时为-50dB.当输出电流为150mA时,其输入-输出压差的典型值为170mV.A highly stable low-dropout (LDO) regulator operated in an extended temperature range of -40 ℃ to 130 ℃ was presented by utilizing the design method of leakage current compensation in high temperature. The LDO regulator with a novel dynamic Miller frequency compensation structure provides high stability at any load, so the LDO regulator is unconditional stability. The proposed LDO regulator was implemented by using 0.5 /μm complementary metal-oxide semiconductor (CMOS) technology of CSMC Technologies Corporation. Simulation and experiment showed that the temperature coefficient for output voltage was only 2× 10^-5/℃ over the range of -40 ℃ to 130 ℃, and the regulator provided full load transient response of less than 50 mV overshoots and undershoots and less than 50 μs setting time. The powersupply rejection ratio at 1 kHz was -50 dB. The typical dropout was 170 mV at 150 mA loading.
分 类 号:TN401[电子电信—微电子学与固体电子学] TN431.1
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