NbSe_2晶体的制备及电学特性的研究  

Preparation of NbSe_2 Crystal and its Electricity Characteristic

作　　者：叶德枢[1] 王洪涛[1] 王璐[1] 李晖[1] 王佐项 

机构地区：[1]温州大学物理与电子信息学院,浙江温州325027

出　　处：《物理测试》2007年第1期20-22,共3页Physics Examination and Testing

摘　　要：文章对蜡源方波材料NbSe2晶体的制备及其电学特性进行综述,介绍了利用化学气相输运法制备NbSe2晶体。测试出NbSe2晶体的临界温度为7.2K,30 K附近发生CDW转变,出现了CDW和超导电性共存的现象,通过分析NbSe2晶体的r-T曲线和NbSe2晶体的XRD图谱,讨论了低温下NbSe2晶体的重入现象。Preparation of NbSe2 crystal and its electricity characteristic are overviewed. The critical temperature of the NbSe2 Crystals are estimated at 7.2 K. The transition point of CDW is near to 30k accompanying with the superconductiviting phenomenon. By analyzing the XRD patterns and the ρ-T curve of NbSe2, the reappearance of the SbSe2 crystals at low temperature are discused.

关 键 词：NbSe2 电学特性 综述 

分 类 号：TB34[一般工业技术—材料科学与工程]