气相生长氮化铝单晶的新方法  

A Novel Method for Growing AlN Single Crystal by Physical Vapor Transport

作　　者：武红磊[1] 郑瑞生[1] 孙秀明[1] 罗飞[1] 杨帆[1] 刘文[1] 敬守勇[1] 

机构地区：[1]深圳大学光电子学研究所,深圳518060

出　　处：《人工晶体学报》2007年第1期1-4,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.60376003;No.60576005);广东省自然科学基金(No.04011297);教育部科技研究重点项目([2005]3号);深圳市科技计划项目(200517)

摘　　要：通过在钨坩埚盖开小孔的方法改变氮化铝结晶衬底上的温度场分布,在开孔处形成局部低温区;由于孔的几何尺寸的限制和氮化铝晶体生长的各向异性,开孔处的氮化铝晶体单晶化;随后,开孔处的单晶起籽晶的作用,逐渐长成较大尺寸、较高质量的氮化铝单晶。目前用该方法已经制备出直径大于2mm的氮化铝单晶体。Temperature distribution in the lid is changed by drilling a little hole in the tungsten crucible lid. By this way, a low temperature local section on the lid is offered. A self-seeded AIN single crystal is grown due to the anisotropic growth property of A1N crystals and limitation of the hole. In the following growth process, the crystal as a seed becomes a large size and high quality single crystal. By this method, AIN single crystals with diameters of larger than 2mm were obtained successfully.

关 键 词：氮化铝 物理气相传输 单晶 

分 类 号：O782[理学—晶体学]