2μm波段激光晶体Tm:YAP的生长缺陷  

Study on the Defects of 2μm Waveband Laser Crystal Tm:YAP

作　　者：杨扬[1] 陆燕玲[1] 王俊[1] 李胜华[2] 孙宝德[1] 

机构地区：[1]上海交通大学金属基复合材料国家重点实验室,上海200030 [2]上海交通大学物理系,上海200240

出　　处：《人工晶体学报》2007年第1期114-118,共5页Journal of Synthetic Crystals

摘　　要：采用提拉法沿a、b、c轴方向生长了Tm:YAP晶体,研究了该晶体的几种常见缺陷。通过化学腐蚀,利用光学显微镜观察了Tm:YAP晶体主要晶面的位错腐蚀坑形貌,发现在沿b轴生长晶体的(010)面上存在位错蚀坑密度不同的区域,对其成因进行了分析。借助偏光显微镜研究了晶体中的孪晶及消光现象,分析了成因并提出了消除措施。用He-Ne激光对晶体内的散射颗粒分布进行了研究,在扫描电镜(SEM)下观察到形状不规则的散射颗粒夹杂。上述研究结果对获得优质Tm:YAP晶体具有重要意义。Tm：YAP crystals were grown along a, b and c axis by Czochralski method. Several kinds of defects in the crystal were studied. Chemical corrosion was used to the slices of Tm： YAP crystal and the etch pits were observed by optical microscope. On the （010） plane of Tm：YAP crystal grown along b axis, there are areas with different dislocation etch pits densities and the cause of this distribution was discussed. Twins were observed in the crystal grown along c cause of formation was analyzed. The existence of scattering axis by polarized optical microscope and its centers in the crystals was investigated by He-Ne laser beam and SEM. The study on defects is important for improving the quality of Tm ： YAP laser crystal.

关 键 词：Tm:YAP晶体 散射颗粒 化学腐蚀 位错 

分 类 号：O614[理学—无机化学]