LiF/DLC修饰电极的掺杂有机电致发光器件的研究  

Investigation of Organic Doped Electroluminescent Devices with LiF/DLC

作　　者：张剑华[1] 王俊西[2] 李雪勇[2] 李宏建[2] 

机构地区：[1]湘南学院物理系,湖南郴州423000 [2]中南大学物理科学与技术学院,湖南长沙410083

出　　处：《半导体光电》2007年第3期321-323,共3页Semiconductor Optoelectronics

基　　金：中国博士后科学基金资助项目(2004035083);湖南省杰出青年科学基金资助项目(03JJY1008);湖南省自然科学基金资助项目(06JJ20034)

摘　　要：选用8-羟基喹啉铝(Alq3)作基材,用具有强红光发射的四(4-羟基-3苯偶氮基)苯基卟啉(TPP)对Alq3进行掺杂,制备结构为ITO/PVK/Alq3∶TPP/Al红光器件,并与在此结构中带有LiF、类金刚石碳(DLC)薄层的四种器件的电致发光光谱、电流-电压和亮度-电压特性进行了比较。结果表明:将LiF、DLC薄层分别用在Alq3/Al界面之间,可降低界面的注入势垒,增强器件的电子注入;在ITO/PVK之间使用LiF薄层可起到限制空穴注入,达到载流子平衡注入的目的。由此认为电子和空穴的平衡注入与合适的载流子复合区域是器件获得高亮度与高效率的根本原因。By using TPP doped 8-hydroxyquinoline, a red device with structure of ITO/ PVK/Alq3 ： TPP/Al is fabricated and its electroluminescent spectra is measured. In the device, the electron injection is enhanced by inserted LiF and DCL thin film between Alq3 ： TPP and Al, and the hole injection is limited by inserting LiF thin films between ITO and PVK. The influence of LiF and DCL thin film on current-voltage and brightness-voltage characteristics is studied. It is found that high brightness and efficiency of the devices are largely ascribed to the balance of electron and hole injection and that of suitable electron and hole recombination zone.

关 键 词：红色器件 电致发光 电流-电压特性 亮度-电压特性 

分 类 号：TN873.3[电子电信—信息与通信工程]