808nm半导体激光器烧结工艺的研究  

Study on Sintering of 808 nm Laser Diodes

作　　者：黄宏娟[1] 崔碧峰[1] 邹德恕[1] 张楠[1] 陈依新[1] 沈光地[1] 

机构地区：[1]北京工业大学北京市光电子技术实验室,北京100022

出　　处：《半导体光电》2007年第3期363-366,共4页Semiconductor Optoelectronics

基　　金：北京市人才强教计划项目(05002015200504);国家"973"计划项目(2006CB604902);北京市科委重点项目(D0404003040221);北工大博士启动基金资助项目(kz0204200387)

摘　　要：研究了808 nm半导体激光器烧结过程中容易出现的“爬”铟现象,根据实验室的实验条件,采用了侧壁氧化结构来解决这个问题。制作了普通结构和侧壁氧化结构的激光器,烧结测试后发现:侧壁氧化结构的管芯烧结成品率可以达到95%以上,比普通结构的烧结成品率提高了20%。再将这两批管芯在500 mA下老化测试,发现:侧壁氧化的管芯寿命明显长于普通结构的管芯。The phenomenon of indium migration which usually happens in the sintering process of 808 nm laser diodes（LDs） was investigated. To solve the problem, the structure of sidewall oxidation is adopted according to the conditions of our lab. Two structural LDs sidewall non-oxidation and sidewall oxidation were manufactured, respectively. After sintering and testing, it is found that the yield of sidewall oxidation LDs reaches 95%, which is 20% greater than that of sidewall non-oxidation. By aging the two structural single LDs with the direct current of 500 mA, it＇s found that the lifetime of sidewall oxidation diodes is obviously longer than that of sidewall non-oxidation diodes.

关 键 词：半导体激光器 烧结 侧壁氧化 

分 类 号：TN248.4[电子电信—物理电子学]